Temperature effect on structural properties of boron oxide thin films deposited by MOCVD method
作者： O.M. Moon , B.-C. Kang , S.-B. Lee , J.-H. Boo
DOI: 10.1016/J.TSF.2004.05.107
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摘要: Abstract Boron oxide (B2O3) thin films were deposited on Si (100) substrates using a single source precursor by thermal MOCVD method under pressure of 150 mTorr and the temperature range 500–650 °C. Tri-isopropyl borate ([(CH3)2CHO]3B) was used as without carrier bubbler gases. In this study, structural properties boron with various deposition temperatures mainly investigated. A highly oriented cubic B2O3 film in [310] direction grown substrate at 600–650 XPS analysis shows that chemical compositions as-grown 500–600 °C have non-stoichiometric value B2O3+x, while those above 600 stoichiometric film. From FT-IR contact angle analysis, we realized crystallinity decreased B–O–H bond formation. We also observed surface morphology, grain size, thickness SEM. The average sizes are varied, 10–40 200–500 nm, depending temperature. With increasing temperature, size well increased. conclusion, strongly dependent upon Therefore, mentioned, more produced surrounding high (above °C). addition, formed is improved
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