Development of highly conductive n‐type μc‐Si:H films at low power for device applications

摘要: Highly conductive phosphorus‐doped n‐type hydrogenated microcrystalline silicon (μc‐Si:H) films have been prepared by the usual (13.56 MHz) radio‐frequency glow discharge of silane (SiH4), phosphine (PH3), and hydrogen (H2) in an ultrahigh‐vacuum deposition system. The highest conductivity obtained this study is 100 S cm−1 after optimizing dilution ratio, chamber pressure, substrate temperature, doping concentration phosphorus. formation microcrystallinity material has studied transmission electron microscopy, x‐ray‐diffraction studies, Raman spectroscopy. volume fraction these amorphous‐microcrystalline mixed‐phase materials estimated from spectra. Sizes crystallites vary with dilution, temperature. variations properties parameters explained terms growth kinetics. μc‐Si:H thin film, thus developed, applied first cell a double‐junction amorphous solar cell. p‐i‐n–p‐i‐n stacked employing film exhibited appreciable improvement open‐circuit voltage, fill factor, efficiency compared to one n layer inner n–p contact. Degradation cells without μc‐n studied.