作者: N. Shi , R. Ramprasad
DOI: 10.1063/1.2822834
关键词:
摘要: A recently developed theory of atomic-scale local dielectric permittivity has been used to determine the position dependent optical and static profiles a few nanoscale HfO2 Si–HfO2 heterojunction slabs. The constants at interior regions each component recovered their respective bulk values. Enhancement constant free surfaces its variations interface could be correlated corresponding surface interfacial chemistry.