作者: Chang Liu , Yongbin Lee , A. D. Palczewski , J.-Q. Yan , Takeshi Kondo
DOI: 10.1103/PHYSREVB.82.075135
关键词:
摘要: We measured the electronic structure of an iron arsenic parent compound LaFeAsO using angle-resolved photoemission spectroscopy (ARPES). By comparing with a full-potential linear augmented plane wave calculation we show that extra large $\ensuremath{\Gamma}$ hole pocket via ARPES comes from at sample surface. Based on this discuss strong-polarization dependence band and temperature-dependent holelike around $M$ point. The two phenomena give additional evidences for existence surface-driven structure.