Investigation of impact ionization and flicker noise properties in indium aluminum arsenide/indium gallinum arsenide metamorphic high electron mobility transistors with various work function-gate metals
作者： Hsien-Chin Chiu , Chia-Hsuan Wu , Che-Kai Lin , Feng-Tso Chien
DOI: 10.1016/J.MSSP.2014.09.035
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摘要: Abstract This study investigates the effect of impact ionization using Ir, Pt, Pd, Ti gate metals and direct correlation between these high work function low frequency noise (LFN) on an In0.4Al0.6As/In0.4Ga0.6As metamorphic electron mobility transistor (MHEMT). The DC, RF, cryogenic LFN is systematically studied discussed. Gate with functions are used to suppress kink leakage current. Experimental results suggest that Ir MHEMT exhibits superior thermal stable properties in a strong electrical field at various temperatures, associated gain, current, excellent low-frequency performance.
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