Epitaxial growth of aluminum on permalloy

摘要: Abstract The epitaxial growth of aluminum [111] by sputtering deposition on Ni 80 Fe 20 has been demonstrated, despite the large 12.2% lattice mismatch in this system. absence high angle grain boundaries films would lead to thinner, smoother and more uniform barrier layers spin-dependent tunneling junctions. strain evolution was monitored in-situ reflection high-energy electron diffraction, grazing incidence X-ray scattering diffraction used verify growth. film after natural oxidation extremely smooth, with an rms roughness 0.2 nm as measured atomic force microscopy.