High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors

作者: Hema C. P. Movva , Amritesh Rai , Sangwoo Kang , Kyounghwan Kim , Babak Fallahazad

DOI: 10.1021/ACSNANO.5B04611

关键词:

摘要: … creating the actual metal–TMD contact, we can potentially … reduces the effective metal work-function at the contact interface. … affecting the top surface work-function. The transferred WSe …

参考文章(50)
Nihar R. Pradhan, Shahriar Memaran, Mauricio Terrones, Humberto Terrones, Byoung Hee Moon, Simin Feng, Luis Balicas, Daniel Rhodes, Yan Xin, Field-effect transistors based on few-layered α-MoTe2 ACS Nano. ,vol. 8, pp. 5911- 5920 ,(2014) , 10.1021/NN501013C
Kristen Kaasbjerg, Kristian S Thygesen, Karsten W Jacobsen, None, Phonon-limited mobility in n -type single-layer MoS 2 from first principles Physical Review B. ,vol. 85, pp. 115317- ,(2012) , 10.1103/PHYSREVB.85.115317
R. Zeis, V. Podzorov, M. E. Gershenson, Ch. Kloc, E. Bucher, High-mobility field-effect transistors based on transition metal dichalcogenides Applied Physics Letters. ,vol. 84, pp. 3301- 3303 ,(2004) , 10.1063/1.1723695
Saptarshi Das, Hong-Yan Chen, Ashish Verma Penumatcha, Joerg Appenzeller, High Performance Multilayer MoS2 Transistors with Scandium Contacts Nano Letters. ,vol. 13, pp. 100- 105 ,(2013) , 10.1021/NL303583V
Kyounghwan Kim, Stefano Larentis, Babak Fallahazad, Kayoung Lee, Jiamin Xue, David C. Dillen, Chris M. Corbet, Emanuel Tutuc, Band Alignment in WSe2-Graphene Heterostructures. ACS Nano. ,vol. 9, pp. 4527- 4532 ,(2015) , 10.1021/ACSNANO.5B01114
L. Wang, I. Meric, P. Y. Huang, Q. Gao, Y. Gao, H. Tran, T. Taniguchi, K. Watanabe, L. M. Campos, D. A. Muller, J. Guo, P. Kim, J. Hone, K. L. Shepard, C. R. Dean, One-dimensional electrical contact to a two-dimensional material. Science. ,vol. 342, pp. 614- 617 ,(2013) , 10.1126/SCIENCE.1244358
Nicholas E. Singh-Miller, Nicola Marzari, Surface energies, work functions, and surface relaxations of low index metallic surfaces from first principles Physical Review B. ,vol. 80, pp. 235407- ,(2009) , 10.1103/PHYSREVB.80.235407
Andrey Y. Serov, Vincent E. Dorgan, Christopher D. English, Eric Pop, Multi-valley high-field transport in 2-dimensional MoS 2 transistors device research conference. pp. 183- 184 ,(2014) , 10.1109/DRC.2014.6872358
Manish Chhowalla, Hyeon Suk Shin, Goki Eda, Lain-Jong Li, Kian Ping Loh, Hua Zhang, The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets Nature Chemistry. ,vol. 5, pp. 263- 275 ,(2013) , 10.1038/NCHEM.1589