Valence band structures of heavily doped strained GexSi1−xlayers

摘要: Valence‐band structure and density‐of‐state (DOS) effective mass are calculated for heavily p‐type‐doped Si strained GexSi1−x layers grown on (100) Si. At low doping values calculations have been made by earlier authors the results agree with published of DOS these authors. The Fermi energy EF measured from valence‐band edge has using our mass. 1020 cm−3 level value is 77.3 meV compared 80 determined luminescence experiments. obtained normally accepted 0.57 hole in more than experimental a factor about 2, i.e., reduce discrepancy 100% to less 4%. barrier height (p+‐Ge0.42Si0.58)/(p‐Si) internal photoemission photo detector also reasonable agreement value. ...