A photoelectron spectroscopy study of ion-irradiation induced defects in single-wall carbon nanotubes
作者： Amit K. Chakraborty , R.A.J. Woolley , Yu.V. Butenko , V.R. Dhanak , L. Šiller
DOI: 10.1016/J.CARBON.2007.09.036
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摘要: Valence band and core level photoemission spectroscopies were used to study the changes brought about by irradiation of a singlewall carbon nanotube (SWCNT) film 3 keV Ar + ions at room temperature. At low ion doses (low defect density) an increase in spectral intensity near Fermi (EF) is observed, associated with formation localized defect-related states. These states are acceptor-like as evidenced shift lower binding energy for both valence features C1s level. For large (high EF decreases, delocalized p bonding disappear, component sp bound appears. This behaviour attributed amorphisation SWCNT films occurs consistent those theoretically predicted. � 2007 Elsevier Ltd. All rights reserved.
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