Electronic structure study of lightly Nb-doped TiO2 electrode for dye-sensitized solar cells
作者： Tsvetkov Nikolay , Liudmila Larina , Oleg Shevaleevskiy , Byung Tae Ahn , None
DOI: 10.1039/C0EE00678E
关键词:
摘要: To improve the conversion efficiency of dye-sensitized solar cells (DSSCs) it is necessary to understand electronic structure TiO2–dye–electrolyte interface in detail. A sturdy junction at can be provided by modifying TiO2 electrode with Nb doping. The Nb-doped was prepared a sol–gel method followed hydrothermal treatment; content varied from 0.5 3.0 mol%. X-ray photoelectron spectroscopy showed that Fermi level shifted away conduction band minimum (CBM) when low (≤1.5 mol%) and toward CBM high (≥2.5 mol%). shift doping due passivation oxygen vacancies nanoparticle surface. Intraband states were formed dopant 1.5 2.5 We have found photovoltaic parameters DSSCs based on doped sensitized cis-[Ru(dcbpyH)2(NCS)2](NBu4)2, N719 dye, are closely related electrode. changes short circuit current open voltage explained relation best 8.0% demonstrated mol% TiO2.
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