Ni diffusion and its influence on electrical properties of AlxGa1−xN∕GaN heterostructures
作者： S. Huang , B. Shen , F. Lin , N. Ma , F. J. Xu
DOI: 10.1063/1.3010371
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摘要: The effect of thermal annealing Ni∕AlxGa1−xN∕GaN structures on electric properties AlxGa1−xN∕GaN heterostructures has been studied by means temperature-dependent Hall measurements and deep level transient spectroscopy. It is found that the mobility two-dimensional electron gas (2DEG) decreases from 1530to986cm2∕Vs at room temperature (RT) after Al0.25Ga0.75N∕GaN heterostructure with a 10nm thick Ni cap layer 600°C. density 2DEG also reduced 2.0×1012cm−2 RT annealing, increasing between 100 460K. determined an acceptorlike activation energy 1.23eV apparent capture cross section 2.8×10−13cm2 introduced into heterostructures. We believe induced diffusion during it results in significant degradation transport
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