Atomic-scale structure and electronic property of the LaAlO3/TiO2 interface

摘要: Combining advanced transmission electron microscopy with high-precision first-principles calculation, atomic-scale structures of the LaAlO3/TiO2 interface are investigated and bridged to their electronic property at atomic level. Experimentally, deposited TiO2 thin film is demonstrated have an anatase phase bond directly LaAlO3 substrate in epitaxial, coherent, atomically abrupt fashion. The atomic-resolution microscopic images reveal that can be terminated either AlO2 or LaO layer, which predicted theory exhibit a semiconducting metallic nature interface, respectively. By applying several analytic methods, we characterize carefully structure determine interfacial bonding mixed covalent-ionic character. combined experimental theoretical studies performed shed light on complex buried fundamental for understanding promising properties fu...