Vertical‐cavity surface‐emitting InGaAs/GaAs lasers with planar lateral definition
作者： M. Orenstein , A. C. Von Lehmen , C. Chang‐Hasnain , N. G. Stoffel , J. P. Harbison
DOI: 10.1063/1.102923
关键词:
摘要: A planarity preserving method for the definition of vertical‐cavity surface‐emitting lasers (VC‐SEL) is described. strained‐layer InGaAs quantum well VC‐SEL structure was grown and were laterally defined using a tailored deep proton implantation process. In these we obtained low threshold current densities 1000 A/cm2 efficient cw operation. This facilitates large‐scale integration devices.
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