Site-Controlled Quantum Emitters in Monolayer MoSe2.

摘要: Atomically thin semiconductors provide a highly attractive platform for quantum emitters (QEs): They can be combined with arbitrary substrates, spatially aligned photonic structures, and electrically driven. All QEs reported to date in these materials have, however, relied on nominally spin-forbidden transitions, radiative rates falling substantially below those of other solid-state QE systems. Here we employ strain confinement monolayer MoSe2 produce engineered QEs, as confirmed photon antibunching measurements. We discuss spin-allowed versus transitions based magneto- time-resolved photoluminescence calculate rate emission greater than 1 ns-1, which exceeds WSe2 by 2 orders magnitude.