Photoexcited elastic waves in free-standing GaAs films

摘要: The ability to generate transversely propagating elastic waves on free-standing semiconductor films in the 10+ GHz frequency range is a critical element effort achieve phonon-based coupling on-chip electronic devices. results of this joint experimental and theoretical study show that such phonons are created by excitation optically subwavelength thickness GaAs with highly focused femtosecond optical pulses. With sufficiently high strain levels, approach could become enabling for applications nano-optomechanics.