Ion-Beam Lithography

摘要: Publisher Summary The endeavor to structure ever smaller dimensions has generated growing interest and investigations in ion-beam lithography (IBL). This chapter evaluates the potential of using ions micro-fabrication process, especially sub-micrometer nanometer range dimensions. discusses physics various processes their limitations obtain an understanding present state art. IBL cannot be considered a technology at this stage its development; however, with very large amount research development field it can expected contribute significantly structuring fabrication high resolution experimental devices, area investigation that is fundamental interest. structures small forefront current research. While there skepticism about feasibility miniaturizing conventional electronic devices into because effects interconnects cross-talk, capabilities focused ion beams produce well-defined profiles implantation detailed could offer new approaches these problems. An speed GaAs MESFETs short gates. most exciting lies possibilities based on quantization occur when approach 10 nm.