作者: F. Leroy , A. El Barraj , F. Cheynis , P. Müller , S. Curiotto
DOI: 10.1103/PHYSREVB.102.235412
关键词:
摘要: The passage of an electric current in a material can cause biased mass transport at its surface. This migration phenomenon is intimately related to the microscopic details atomic processes diffusion and attachment/detachment step edges. Using low-energy electron microscopy, we have examined operando under $\mathrm{Si}(111)\text{\ensuremath{-}}1\ifmmode\times\else\texttimes\fi{}1$ advacancy islands confined on $\mathrm{Si}(111)\text{\ensuremath{-}}7\ifmmode\times\else\texttimes\fi{}7$ terraces. move opposite direction, with velocity increasing radius. effective valence Si adatoms $2.8\ifmmode\pm\else\textpm\fi{}0.5$ kinetic length attachment-detachment about 500 nm. analysis island's shape reveals that significantly biases rate transfers edges modifying overall shape.