Growth, optical and scintillation properties of Gd3+ doped Bi4Si3O12 single crystals
作者： Xuefeng Xiao , Jiayue Xu , Xuefeng Zhang
DOI: 10.35848/1347-4065/AB87DB
关键词:
摘要: Pure Bi4Si3O12(BSO) and Bi4Si3O12:Gd (BSO:Gd) crystals with nominal concentrate of 1.0–6.0 mol% Gd2O3 were grown by the modified vertical Bridgman method. The X-ray powder diffraction, transmission fluorescence spectra have been investigated on BSO:Gd crystals. Scintillation properties Gd3+ doped Bi4Si3O12 single investigated. Doped small amount Gd2O3(1.0–6.0 mol%), relative light yield energy resolution BSO improved significantly. experimental data indicates that sensitization effect a doping enables intrinsic defects reduce, improve large can cause new crystal field distortion further affect luminescence Bi3+. These results indicate could be one promising candidates for replacing BGO in some applications such as electromagnetic calorimeter dual readout nuclear or high physics.
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