Structure and method for finfet integrated with capacitor
作者： Chia-Hsin Hu , Sun-Jay Chang
DOI:
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摘要: The present disclosure provides one embodiment of a semiconductor structure that includes substrate having first region and second region; shallow trench isolation (STI) feature formed in the substrate. STI portion disposed thickness T 1 2 greater than depth, being recessed from feature. also plurality fin active regions on substrate; conductive features feature, wherein covers region.
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