作者: Yoshitoshi Kida , Hiroaki Ichikawa , Yoshiharu Nakajima
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摘要: In the structure in which an input signal IN and a reverse-phase XIN thereof are externally input, external IC is required for generating XIN, number of terminals two. A level shift circuit formed on insulating substrate, such as glass using transistors with large characteristic variations, example, TFTs high thresholds Vth, includes complementary generator unit (11) driven by first power supply (VCC) having amplitude voltage equal to from substrate generate signals single-phase IN. The generated level-shifted (14). Therefore, it no longer necessary XIN.