Effects of Mn doping on dielectric and ferroelectric properties of (Pb,Sr)TiO3 films on (111) Pt/Ti/SiO2/Si substrates
作者： J. Yang , X. J. Meng , M. R. Shen , J. L. Sun , J. H. Chu
DOI: 10.1063/1.3257168
关键词:
摘要: A series of Mn doped Pb0.5Sr0.5TiO3 (PSMT) films with dopant concentrations from 0 to 10 mol % was fabricated on (111) Pt/Ti/SiO2/Si substrates by chemical solution deposition. Their microstructure, ferroelectric, and dielectric properties were investigated, doping found have a significant influence the (Pb,Sr)TiO3 film. The improved microstructure increased grain size, remnant polarization, permittivity its tunability dc electric field, reduced coercive field loss observed in samples. PSMT film 0.5 mol % dopants exhibits optimum characteristics maximal polarization (2Pr=25.28 μC/cm2), (1427) (74.5%, at 100 kHz), minimal (0.015) 1 kHz. improvement attributed enhanced displacement polar ions, and, most importantly, suppression oxygen-vacancy-induced ferroelectric domain pinning, wh...
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