Deflection scan speed adjustment during charged particle exposure
作者： Marco Jan-Jaco Wieland , Teunis Van De Peut
DOI:
关键词:
摘要: A method for exposing a wafer in charged particle lithography system. The comprises generating plurality of beamlets, the beamlets arranged groups, each group comprising an array beamlets; moving under first direction at scan speed; deflecting second substantially perpendicular to deflection speed, and adjusting speed adjust dose imparted by on wafer.
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