A low-noise K-band class-C VCO for E-band 5G backhaul systems in 55nm BiCMOS technology
作者： Niccolo Lacaita , Matteo Bassi , Andrea Mazzanti , Francesco Svelto
DOI: 10.1109/PRIME.2017.7974140
关键词:
摘要: Next-generation 5G communication systems require adaptive high-order modulations to increase spectral efficiency. To limit EVM, very low phase noise levels are required — i.e. less than −117dBc/Hz at 1MHz offset for 64QAM f=20GHz. In this paper, the design and measurements of a low-noise K-Band VCO presented. The challenges achieving such discussed in detail, with particular emphasis on minimization L/Q, inductor versus quality factor ratio. Prototypes have been realized 55nm BiCMOS technology. Operated 2.5V supply largest amplitude allowed by reliability constraints, show as −119dBc/Hz from 20GHz carrier tuning range (TR) 19% FoM=−187dBc/Hz. Power consumption is 56mW. best authors' knowledge, presented shows lowest reported among state-of-the-art VCOs TR>10%.
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