Low temperature silicon nitride by hot wire chemical vapour deposition for the use in impermeable thin film encapsulation on flexible substrates.

摘要: High quality non porous silicon nitride layers were deposited by hot wire chemical vapour deposition at substrate temperatures lower than 110 C. The layer properties investigated using FTIR, reflection/transmission measurements and 1:6 buffered HF etching rate. A Si–H peak position of 2180 cm−1 in the Fourier transform infrared absorption spectrum indicates a N/Si ratio around 1.2. Together with refractive index 1.97 wavelength 632 nm an extinction coefficient 0.002 400 nm, this suggests that transparent high density material has been made below C, which is compatible polymer films expected to have impermeability. To confirm compatibility was on poly(glycidyl methacrylate) initiated deposition, resulting highly double layer.