X‐ray photoelectron spectroscopy and Auger electron spectroscopy studies of glow discharge Si1−xCx:H films

摘要: X‐ray photoelectron spectroscopy (XPS) and Auger electron (AES) were used to characterize the air‐exposed sputter‐cleaned surfaces of glow‐discharge‐produced Si1−xCx:H (x=0.05 0.90) films. On surfaces, silicon was preferentially oxidized with enriched carbon existing as graphite or hydrocarbon. Signal intensities obtained from sputter cleaned 1 keV Ar+ ion beams indicated no significant preferential sputtering C Si for these The values 1s 2p 2s binding energies well valence band spectra suggested a change in local atomic configurations at x∼0.6–0.7. Based on XPS AES results reported IR absorption data, slightly cross‐linked, hydrogen substituted polysilicon an almost fully polycarbon proposed describe structure films below above x∼0.6–0.7, respectively.