1-mW CW-RT monolithic VCSEL at 1.55 μm
作者： J. Boucart , C. Starck , F. Gaborit , A. Plais , N. Bouche
DOI: 10.1109/68.766766
关键词:
摘要: In this letter, we demonstrate the first result of a high-power (1 mW) continuous-wave room-temperature vertical-cavity surface-emitting laser emitting at 1.55 /spl mu/m using single InP substrate. The whole structure was grown monolithically gas source molecular beam epitaxy and incorporates two original approaches. originality consists in growth metamorphic GaAs-AlAs Bragg mirror directly on an InP-based cavity. second novel idea is to use tunnel junction for current injection. Moreover by these approaches processing very simple and, therefore, fulfills goal low-cost production access interconnections applications.
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