Substitutional carbon doping of hexagonal multi-walled boron nitride nanotubes (h-MWBNNTs) via ion implantation
作者： Ishaq Ahmad , M. Usman , S. Rabab Naqvi , Javed Iqbal , Lu Bo
DOI: 10.1007/S11051-013-2170-8
关键词:
摘要: Carbon doping in hexagonal multi-walled boron nitride nanotubes (BNNTs) through ion implantation is successfully achieved. Nuclear reaction analysis confirms that carbon atoms are homogeneously doped into the BNNTs, while Fourier transform infrared spectroscopy reveals C-N bonding produced. Moreover, B-C-N phases confirmed by X-ray Diffraction and Raman after C+ implantation. High resolution transmission electron microscopy results show BNNTs slightly damaged UV absorption spectra reduces band gap of from 5.5 to 4.6 eV increasing fluence. It suggested bandgap decrease due as well defect formation BNNTs. h-BNNTs proposed knockout ejections B N high energy ions consequently make ternary structure.
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