Deposition of doped copper seed layers having improved reliability

摘要: Improved methods of depositing copper seed layers in interconnect structure fabrication processes are provided. Also provided the resulting structures, which have improved electromigration performance and reduced line resistance. According to various embodiments, involve a bilayer on barrier layer recessed feature partially fabricated semiconductor substrate. The has alloy pure layer, with is deposited layer. bilayers resistance increase better than conventional doped layers. Precise control achieved by tuning thickness meet desired performance.