作者: J.E. Ralph , J.M. Woodcock
DOI: 10.1016/0022-3093(72)90025-7
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摘要: Abstract A model is proposed to account for the conduction, negative resistance, electron emission, electro-luminescence and other features of “voltage formed” thin amorphous oxide films. This based on purely electronic characteristics expected from filamentary regions containing a broad impurity or defect band. Such band states Greene's theory electrolytic forming in which oxygen vacancies are produced. Trapping localised associated with this can increase V0, r.m.s. value random excess potential, resulting decrease available conducting non states. further result drastic resistance at certain points along filament. It considered that it high field behaviour such gives rise well established these