Infrared Photodiodes on II-VI and III-V Narrow-Gap Semiconductors
作者： Volodymyr Tetyorkin , Andriy Sukach , Andriy Tkachuk
DOI: 10.5772/52930
关键词:
摘要: During the last two decades HgCdTe, InSb and InAs infrared (IR) photodiodes have de‐ veloped rapidly for utilization in second generation thermal-imaging systems. Obviously, they are regarded as most important candidates development of third systems well. Despite this fact many problems still exist manufacturing technology well understanding physical phenomena materials photodiodes. As a re‐ sult, threshold parameters commercially available IR far from val‐ ues predicted theoretically.
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