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The electron transport within the wide energy gap compound semiconductors gallium nitride and zinc oxide
作者: Walid Abdul Hadi
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参考文章
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Properties of Group-IV, III-V and II-VI Semiconductors
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Wide Bandgap Semiconductors: Fundamental Properties and Modern Photonic and Electronic Devices
Wide Bandgap Semiconductors: Fundamental Properties and Modern Photonic and Electronic Devices.
,(2007)
3.
Ümit Özgür, Hadis Morkoç,
Zinc Oxide: Fundamentals, Materials and Device Technology
,(2009)
4.
C. Jagadish, S. J. Pearton,
Zinc oxide bulk, thin films and nanostructures : processing, properties and applications
Elsevier.
,(2006)
5.
C. Moglestue,
Monte Carlo simulation of semiconductor devices
,(1993)
6.
Michael Shur,
GaAs devices and circuits
,(1987)
7.
Karlheinz Seeger,
Semiconductor Physics: An Introduction
,(1973)
8.
Biswaranjan Nag,
Electron transport in compound semiconductors
,(1980)
9.
N. S. Mansour, K. W. Kim, M. A. Littlejohn,
Theoretical study of electron transport in gallium nitride
Journal of Applied Physics.
,vol. 77, pp. 2834- 2836 ,(1995) ,
10.1063/1.358696
10.
S. J. Pearton, D. P. Norton, K. Ip, Y. W. Heo, T. Steiner,
Recent advances in processing of ZnO
Journal of Vacuum Science & Technology B.
,vol. 22, pp. 932- 948 ,(2004) ,
10.1116/1.1714985
来源期刊
2014 年,
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