Self‐consistent calculation of electronic states in AlGaAs/GaAs/AlGaAs selectively doped double‐heterojunction systems under electric fields

摘要: The electronic states in AlGaAs/GaAs/AlGaAs selectively doped double‐heterojunction (SD‐DH) systems or single‐quantum‐well have been calculated self‐consistently for the case where an external gate voltage is applied perpendicularly to surface. transition from symmetrical asymmetrical distributions of electrons by field predicted. variations electron concentration with are found be good agreement experiment. shoulder structures observed dependence mobility successfully accounted and ascribed onset population upper subbands. This analysis expected provide powerful means evaluate performance SD‐DH field‐effect transistors optimize their design.