Two-Dimensional Materials Preparation, Characterization, and Device Integration for Novel Applications

摘要: Author(s): Valentin, Michael Daniel | Advisor(s): Bartels, Ludwig Abstract: Two-dimensional materials, especially transaction metal dichalcogenides, have shown a wide variety of applications and variability desirable electronic characteristics. Various methods been demonstrated to deposit pristine monolayer flakes. Traditional chemical vapor deposition at atmospheric high-vacuum pressure growth TMDs had demonstrated. Rhenium disulfide (ReS2), novel TMD, is grown via tested concluding with results challenges come. In this work, TMD thin films proven play key role in advancing performance high-power devices. Vertical devices based on 2D semiconductor heterostructures demonstrate the potential for high speed large power performance. Taking advantage mainstream 3D materials such as GaN transition dichalcogenides fabricate structure. The path functionable 3-terminal heterojunction bipolar transistor (HBT) has revealed showing that clean, sharp interfaces major electrical proposed