作者: Kosol Son , Nikolai Kislov , Jing Wang
DOI: 10.1117/12.853937
关键词:
摘要: The current state-of-the-art infrared detection technology requires either exotic materials or cryogenic conditions to perform its duty. Implementing by coupling tuned antenna with a micro-bolometer offers a promising technological platform for mass production of un-cooled detectors and imaging arrays. design, fabrication, characterization planar slotted have been demonstrated on thin silicon dioxide (SiO2) membrane detection. was chosen due to ease fabrication greater fabrication tolerance, higher gain greater bandwidth coveted the applications. employment the SiO2 membrane mitigates losses surface waves generated as radiation into the substrates. In addition, retaining thickness be less than wavelength, amount interference is greatly reduced. A strategically designed dipole is implemented along an integrated direct current (DC) block enabled co-fabricated on-chip capacitors between two DC patches separate high frequency signals without need sub-micron separation line. As result this revision, standard UV photolithography instead e-beam lithography can used fabricate production. This research considered important step toward our main goal, which developing ultrafast detector by coupling metal insulator (MIM) tunneling diode.