Etching apparatus using neutral beam

作者: Do-Haing Lee , Geun-young Yeom , Min-Jae Chung

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摘要: A damage-free apparatus for etching the large area by using a neutral beam which can perform an process without causing electrical and physical damages use of is provided. The includes: ion source extracting accelerating having predetermined polarity; grid positioned at rear plurality holes through passes; reflector closely attached to corresponding in grid, reflecting passed neutralizing into beam; stage placing substrate be etched path beam.

参考文章(11)
Samuel A. Cohen, Dennis M. Manos, Robert W. Motley, William D. Langer, Neutral particle surface alteration ,(1986)
Joel H. Fink, Alan M. Frank, Apparatus for neutralization of accelerated ions ,(1976)
Norman H. Tolk, Kenneth J. Snowdon, Royal G. Albridge, Richard F. Haglund, Method and apparatus for producing neutral atomic and molecular beams ,(1987)
Joseph E. Campana, Ton beam neutralizer padn. ,(1984)
B. A. Helmer, D. B. Graves, Molecular dynamics simulations of Cl2+ impacts onto a chlorinated silicon surface: Energies and angles of the reflected Cl2 and Cl fragments Journal of Vacuum Science and Technology. ,vol. 17, pp. 2759- 2770 ,(1999) , 10.1116/1.581942
Takashi Yunogami, Ken’etsu Yokogawa, Tatsumi Mizutani, Development of neutral‐beam‐assisted etcher Journal of Vacuum Science and Technology. ,vol. 13, pp. 952- 958 ,(1995) , 10.1116/1.579657
Reduction Of Residual Charge In Surface-neutralization-based Neutral Beams international symposium on plasma process-induced damage. pp. 175- 178 ,(1997) , 10.1109/PPID.1997.596734
Seiji Samukawa, Keizo Kinoshita, Neutral particle beam irradiation apparatus ,(1996)
Mitsushima Koichi, MASK FOR ION BEAM EXPOSURE ,(1986)
Shimokawa Fusao, Nagai Kazutoshi, HIGH-SPEED ATOMIC BEAM SOURCE ,(1988)