作者: Do-Haing Lee , Geun-young Yeom , Min-Jae Chung
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摘要: A damage-free apparatus for etching the large area by using a neutral beam which can perform an process without causing electrical and physical damages use of is provided. The includes: ion source extracting accelerating having predetermined polarity; grid positioned at rear plurality holes through passes; reflector closely attached to corresponding in grid, reflecting passed neutralizing into beam; stage placing substrate be etched path beam.