Direct Nanowiring of Carbon Nanotubes for Highly Integrated Electronic and Spintronic Devices

作者： Y‐H Lee , Y‐T Jang , C‐H Choi , D‐H Kim , C‐W Lee

DOI: 10.1002/1521-4095(200109)13:18<1371::AID-ADMA1371>3.0.CO;2-S

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摘要: showed a novel strategy formaking high-quality individual nanotubes—grown at1000˚C—bridging two metallic islands on silicon wafers pat-terned the micrometer scale. Their functional applicationsfor electronic devices were also demonstrated. Also, Papado-poulos et al. introduced Y-junction formation techniqueusing branched nanochannel alumina templates.

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Direct Nanowiring of Carbon Nanotubes for Highly Integrated Electronic and Spintronic Devices

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Direct Nanowiring of Carbon Nanotubes for Highly Integrated Electronic and Spintronic Devices

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