作者: Kiyohiro Sugiyama , Fumitoshi Iga , Mitsuo Kasaya , Tadao Kasuya , Muneyuki Date
DOI: 10.1143/JPSJ.57.3946
关键词:
摘要: High field magnetization and magnetoresistance of YbB 12 are investigated up to 550 kOe at low temperatures with special interest in the semiconductive band gap energy under field. Very large negative is found system perfectly metallic around 500 anomalous increase magnetization. The experimental results explained by introducing model that produced mixing f- conduction electrons destroyed applying released f-electron gives an g J -value estimated as 1.9 for f-level this means \(\varGamma_{8}\) may be most favourable responsible Fermi energy.