Electromagnetic properties of thin-film transformer-coupled superconducting tunnel junctions
作者： T. F. Finnegan , V. Lacquaniti , R. Vaglio
DOI: 10.1063/1.329487
关键词:
摘要: Multisection superconducting microstrip transformers with designed output impedances below 0.1 Ω have been fabricated via precise photolithographic techniques to investigate the electromagnetic properties of Nb‐Nb oxide‐Pb tunnel junctions. The low‐impedance transformer sections incorporate a rf sputtered thin‐film Ta‐oxide dielectric, and reproducible external coupling achievable this type geometry makes possible systematic investigation device parameters as function tunneling oxide thickness.
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