Optical absorption of thin Hg1-xCdxTe epitaxial layers
作者： K -P Mollmann , H Kissel
DOI: 10.1088/0268-1242/6/12/012
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摘要: The absorption coefficient near the fundamental edge of Hg1-xCdxTe has been measured. transition from exponential tail to square root law deduced for direct interband within Kane-band structure is used determine gap energy. It was found that at energy weakly temperature dependent 2000 cm-1< alpha (Eg)<4000 cm-1.
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