作者: Jianguo Ma , Xinru Li , Hsien-Shun Wu , C-K C. Tzuang
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摘要: This paper presents a monolithic leaky EH1-mode antenna at 400 GHz, incorporating complementary-conducting-strip synthetic transmission-line structure, aimed to tackle two CMOS foundry process limiting parameters on conventional design, first, the thin dielectric substrate height, order of 0.67% operating wavelength, and second, fulfillment maximum/minimum metal filling design rule each layer. A connected array 11 × 200 cells using 0.13 μm 1P8M process, with unit cell 16 μm2, shows good agreement between measured simulated input reflection coefficient, showing return loss greater than 10 dB 358 GHz GHz. Simulated results show peak gain 1.589 radiation efficiency 53.9% in H-plane, considering all thickness, conductivity, losses.