The relationship between Oxide charge and device degradation: A comparative study of n- and p- channel MOSFET's
作者： A. Schwerin , W. Hansch , W. Weber
关键词:
摘要: We present a comparative study of device degradation for conventional n- and p-channel MOSFET's. The experimentally determined features are investigated with 2-D simulation including fast slow interface states as well channel mobility due to Coulomb scattering off these charges. Three different models concerning kind spatial distribution studied. model that self-consistently describes the observed experimental in pentode subthreshold regimes device. Furthermore, substrate current is included this analysis.
harvard.edu
sci-hub.se 参考文章(19)
K. Ohuchi, T. Hamamoto, Y. Oowaki, K. Hieda, Asymmetry of the Substrate Current Characteristics Enhanced by the Gate Bird's Beak symposium on vlsi technology. pp. 67- 68 ,(1986)
H. Gesch, J.-P. Leburton, G.E. Dorda, Generation of interface states by hot hole injection in MOSFET's IEEE Transactions on Electron Devices. ,vol. 29, pp. 913- 918 ,(1982) , 10.1109/T-ED.1982.20799
Chih‐Tang Sah, Jack Yuan‐Chen Sun, Joseph Jeng‐Tao Tzou, Study of the atomic models of three donorlike defects in silicon metal‐oxide‐semiconductor structures from their gate material and process dependencies Journal of Applied Physics. ,vol. 55, pp. 1525- 1545 ,(1984) , 10.1063/1.333411
H.E. Maes, G. Groeseneken, Determination of spatial surface state density distribution in MOS and SIMOS transistors after channel hot electron injection Electronics Letters. ,vol. 18, pp. 372- 374 ,(1982) , 10.1049/EL:19820255
K.R. Hofmann, C. Werner, W. Weber, G. Dorda, Hot-electron and hole-emission effects in short n-channel MOSFET's IEEE Transactions on Electron Devices. ,vol. 32, pp. 691- 699 ,(1985) , 10.1109/T-ED.1985.22000
P. Heremans, H.E. Maes, N. Saks, Evaluation of hot carrier degradation of N-channel MOSFET's with the charge pumping technique IEEE Electron Device Letters. ,vol. 7, pp. 428- 430 ,(1986) , 10.1109/EDL.1986.26425
T. Tsuchiya, J. Frey, Relationship between hot-electrons/Holes and degradation of p- and n-channel MOSFET's IEEE Electron Device Letters. ,vol. 6, pp. 8- 11 ,(1985) , 10.1109/EDL.1985.26024
T. Tsuchiya, T. Kobayashi, S. Nakajima, Hot-carrier-injected oxide region and hot-electron trapping as the main cause in Si nMOSFET degradation IEEE Transactions on Electron Devices. ,vol. 34, pp. 386- 391 ,(1987) , 10.1109/T-ED.1987.22934
R. Tielert, Two-dimensional numerical simulation of impurity redistribution in VLSI processes IEEE Transactions on Electron Devices. ,vol. 27, pp. 1479- 1483 ,(1980) , 10.1109/T-ED.1980.20060
Y. Nissan-Cohen, G.A. Franz, R.F. Kwasnick, Measurement and analysis of hot-carrier-stress effect on NMOSFET's using substrate current characterization IEEE Electron Device Letters. ,vol. 7, pp. 451- 453 ,(1986) , 10.1109/EDL.1986.26433