Annealing characteristics of Si‐rich SiO2films

作者: L. A. Nesbit

DOI: 10.1063/1.95842

关键词:

摘要: Silicon‐rich SiO 2 films of various compositions were deposited by atmospheric or plasma‐enhanced chemical vapor deposition (CVD) techniques. These films were annealed at …

参考文章(15)
Hidenobu Mochizuki, Teruaki Aoki, Hisayoshi Yamoto, Masanori Okayama, Motoaki Abe, Tetsuo Ando, Semi-Insulating Polycrystalline-Silicon (SIPOS) Films Applied to MOS Integrated Circuits Japanese Journal of Applied Physics. ,vol. 15, pp. 41- 48 ,(1976) , 10.7567/JJAPS.15S1.41
John L. Moll, Physics of Semiconductors ,(1964)
J. W. Christian, H. M. Otte, The theory of transformations in metals and alloys ,(1975)
S. Vepřek, Z. Iqbal, F.-A. Sarott, A thermodynamic criterion of the crystalline-to-amorphous transition in silicon Philosophical Magazine Part B. ,vol. 45, pp. 137- 145 ,(1982) , 10.1080/13642818208246392
M. Hamasaki, T. Adachi, S. Wakayama, M. Kikuchi, Crystallographic study of semi‐insulating polycrystalline silicon (SIPOS) doped with oxygen atoms Journal of Applied Physics. ,vol. 49, pp. 3987- 3992 ,(1978) , 10.1063/1.325356
D.J. DiMaria, K.M. DeMeyer, D.W. Dong, Electrically-alterable memory using a dual electron injector structure IEEE Electron Device Letters. ,vol. 1, pp. 179- 181 ,(1980) , 10.1109/EDL.1980.25279
D. J. DiMaria, D. W. Dong, C. Falcony, T. N. Theis, J. R. Kirtley, J. C. Tsang, D. R. Young, F. L. Pesavento, S. D. Brorson, Charge transport and trapping phenomena in off‐stoichiometric silicon dioxide films Journal of Applied Physics. ,vol. 54, pp. 5801- 5827 ,(1983) , 10.1063/1.331806
A. Hartstein, J. C. Tsang, D. J. DiMaria, D. W. Dong, Observation of amorphous silicon regions in silicon‐rich silicon dioxide films Applied Physics Letters. ,vol. 36, pp. 836- 837 ,(1980) , 10.1063/1.91341
A.V. Dvurechensky, F.L. Edelman, I.A. Ryazantsev, The phase composition of SiOx films Thin Solid Films. ,vol. 91, ,(1982) , 10.1016/0040-6090(82)90127-4
S.K.-C. Lai, D.J. DiMaria, F.F. Fang, Silicon-rich SiO 2 and thermal SiO 2 dual dielectric for yield improvement and high capacitance IEEE Transactions on Electron Devices. ,vol. 30, pp. 894- 897 ,(1983) , 10.1109/T-ED.1983.21233