作者: Erfan Owji , Hosein Mokhtari , Alireza Keshavarz
DOI: 10.1007/S40995-017-0153-9
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摘要: In this paper, the effects of temperature, pressure, and size on maximum optical absorption coefficients refractive index changes GaAs quantum dots with a hydrogen impurity for different electronic transitions are calculated. For propose, bandgap energy, effective mass, dielectric constant studied. Using Runge–Kutta numerical method, eigenenergies eigenstates Results show that increasing pressure (temperature) shifts properties to high photon energy leads decreasing (increasing) its peak, while it low fluctuates peak. Also, s–p transition occurs in lower than other transitions. Additionally, one can see stability behavior fluctuations temperature compare transition. Finally, value is fluctuated by changing size.