Plasma ion implantation system with axial electrostatic confinement
作者： Steven Walther , Ziwei Fang
DOI:
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摘要: A plasma ion implantation system includes a process chamber, source for generating in the platen holding substrate an implant pulse configured to generate pulses accelerating ions from into substrate, and axial electrostatic confinement structure confine electrons direction generally orthogonal surface of platen. The may include auxiliary electrode spaced bias at negative potential relative plasma.
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