Cluster simulation of correlation effect in hole-doped high-temperature superconductor

作者: Mikio Eto , Riichiro Saito , Hiroshi Kamimura

DOI: 10.1016/0038-1098(89)90784-9

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摘要: Abstract Electronic states of LaCuO system are calculated from the first principles, using MCSCF-CI method and by taking CuO6 Cu2O11 clusters as a model. For it is shown that electronic very sensitive to distance between apical oxygen copper atoms, which becomes shorter with doping divalent ions. in undoped case two electrons localized dx2−y2 orbitals make anti-ferromagnetic coupling exchange integral J 1600 K. When hole doped, we show doped spends 39 % time at sites while 61 sites. This due energy gain arising direct Cu O unpaired spins results ferromagnetic spin-coupling spins.

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