作者: John L. Pennock , Patrick E. Richard
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摘要: An analog circuit for processing signals in an integrated comprising a number of metal oxide semiconductor transistor devices. The includes first device having thin thickness, and second thicker thickness. A voltage pulse protection is arranged to maintain the operating presence rapidly rising waveform (e.g. ESD), or at least mitigate its effect on device. Preferably cascode based op amp structure implemented.