On the flicker noise in submicron silicon MOSFETs
作者： E. Simoen , C. Claeys
DOI: 10.1016/S0038-1101(98)00322-0
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摘要: An overview is given of recent theoretical concepts and experimental findings with respect to the flicker or 1/f noise in advanced silicon MOSFETs. First, a summary will be given of the …
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L.K.J. Vandamme, R.G.M. Penning de Vries, Correlation between most 1/f noise and CCD transfer inefficiency Solid-state Electronics. ,vol. 28, pp. 1049- 1056 ,(1985) , 10.1016/0038-1101(85)90038-3
N. Lukyanchikova, M. V. Petrichuk, N. Garbar, E. Simoen, C. Claeys, Identification of isolation-edge related random telegraph signals in submicron silicon metal–oxide–semiconductor field-effect transistors Applied Physics Letters. ,vol. 71, pp. 3874- 3876 ,(1997) , 10.1063/1.120530
H C Shin, Chenming Hu, Thin gate oxide damage due to plasma processing Semiconductor Science and Technology. ,vol. 11, pp. 463- 473 ,(1996) , 10.1088/0268-1242/11/4/002
G. Reimbold, Modified 1/f trapping noise theory and experiments in MOS transistors biased from weak to strong inversion—Influence of interface states IEEE Transactions on Electron Devices. ,vol. 31, pp. 1190- 1198 ,(1984) , 10.1109/T-ED.1984.21687
B. Neri, P. Olivo, B. Riccò, Low‐frequency noise in silicon‐gate metal‐oxide‐silicon capacitors before oxide breakdown Applied Physics Letters. ,vol. 51, pp. 2167- 2169 ,(1987) , 10.1063/1.98930
K.K. Hung, P.K. Ko, C. Hu, Y.C. Cheng, A physics-based MOSFET noise model for circuit simulators IEEE Transactions on Electron Devices. ,vol. 37, pp. 1323- 1333 ,(1990) , 10.1109/16.108195
G. Ghibaudo, O. Roux, Ch. Nguyen-Duc, F. Balestra, J. Brini, Improved Analysis of Low Frequency Noise in Field-Effect MOS Transistors Physica Status Solidi (a). ,vol. 124, pp. 571- 581 ,(1991) , 10.1002/PSSA.2211240225
C. Surya, W. Wang, W.K. Fong, C.H. Chan, P.T. Lai, Effects of Ar+ back-surface gettering on the properties of flicker noise in n-channel nitrided MOSFETs Solid-state Electronics. ,vol. 39, pp. 1577- 1580 ,(1996) , 10.1016/0038-1101(96)00069-X
E.P Vandamme, L.K.J Vandamme, C Claeys, E Simoen, R.J Schreutelkamp, Impact of silicidation on the excess noise behaviour of mos transistors Solid-State Electronics. ,vol. 38, pp. 1893- 1897 ,(1995) , 10.1016/0038-1101(95)00011-H
D.M. Fleetwood, Fast and slow border traps in MOS devices european conference on radiation and its effects on components and systems. ,vol. 43, pp. 779- 786 ,(1995) , 10.1109/23.510713