AlGaN/GaN high electron mobility transistors with InGaN back-barriers
作者： T. Palacios , A. Chakraborty , S. Heikman , S. Keller , S.P. DenBaars
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摘要: A GaN/ultrathin InGaN/GaN heterojunction has been used to provide a back-barrier the electrons in an AlGaN/GaN high-electron mobility transistor (HEMT). The polarization-induced electric fields InGaN layer raise conduction band GaN buffer with respect channel, increasing confinement of two-dimensional electron gas under high field conditions. enhanced is especially useful deep-submicrometer devices where important improvement pinchoff and 50% increase output resistance have observed. These also showed excellent high-frequency performance, current gain cut-off frequency (f/sub T/) 153 GHz power max/) 198 for gate length 100 nm. At different bias, record f/sub max/ 230 was obtained.
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