Fast emission dynamics in droplet epitaxy GaAs ring-disk nanostructures integrated on Si.
作者： L Cavigli , S Bietti , M Abbarchi , C Somaschini , A Vinattieri
DOI: 10.1088/0953-8984/24/10/104017
关键词:
摘要: The emission dynamics in GaAs/AlGaAs coupled ring-disk (CRD) quantum structures fabricated on silicon substrates is presented. CRD are self-assembled via droplet epitaxy, a growth technique which, due to its low thermal budget, compatible with the monolithic integration of III-V devices Si based electronic circuits. Continuous wave, time resolved photoluminescence and theoretical calculations effective mass approximations presented for assessment carrier properties CRDs. CRDs show fast which expected be suitable ultrafast optical switching applications integrated silicon.
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