Growth control of epitaxial GeTe–Sb2Te3 films using a line-of-sight quadrupole mass spectrometer
作者： Karthick Perumal , Wolfgang Braun , Henning Riechert , Raffaella Calarco
DOI: 10.1016/J.JCRYSGRO.2014.03.039
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摘要: Abstract A narrow growth window combined with highly temperature dependent compositional variations poses a serious problem for the of epitaxial GeTe–Sb2Te3 (GST) thin films. The problems are further aggravated by weak coupling radiatively heated non-contact thermocouples to substrate. An increase in surface during as inferred from desorption GeTe heteromolecules and resulting change alloy composition studied. Using signal feedback control temperature, thermocouple was varied over duration maintain constant hence temperature. Interestingly, grown films varies along pseudobinary line just varying without changing supplied flux. out-of-plane lattice epitaxially GST film increases an Ge concentration.
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